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SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2671 ( F5F90HVX2 ) 900V 5A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The *oe Avalanche resistance guaranteed. APPLICATION *oe Switching power supply of AC 240V input OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) *oe High voltage power supply *oe Inverter RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 900 Gate-Source Voltage VGSS *}30 ID 5 Continuous Drain Current* DC*j i Continuous Drain Current* Peak) i IDP Pulse width*...10Es, Duty cycle*...1/1000 1 Continuous Source Current* DC*j i IS 5 Total Power Dissipation PT 40 Repetitive Avalanche Current IAR Tch= 150*Z 5 Single Avalanche Energy EAS Tch= 25*Z 100 Repetitive Avalanche Energy EAR Tch= 25*Z 10 Dielectric Strength Vdis Terminals to case,* AC 1 minute @ 2 Mounting Torque TOR * i Recommended torque * Nm *j F 0.3 0.5 Unit *Z V A W A mJ kV Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Static Drain-Source On-state Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK2671 ( F5F90HVX2 ) Min. 900 Typ. Max. 250 0.1 2.4 2.5 4.0 2.1 3.0 Unit V A S V ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 2.5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1MHZ ID = 2.5A, RL = 60, VGS = 10V 45 1140 23 105 55 210 2.8 3.5 1.5 3.12 / nC pF 100 350 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2671 10 Tc = -55C Transfer Characteristics 25C 8 Drain Current ID [A] 6 100C 150C 4 2 VDS = 25V TYP 0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2671 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 2.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2671 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2671 10 Safe Operating Area 100s 200s 1 Drain Current ID [A] R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2671 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2671 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2671 10000 Capacitance Ciss 1000 Capacitance Ciss Coss Crss [pF] 100 Coss Crss 10 f=1MHz Ta=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2671 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V 0V Rg = 60 IAS = 5A 10 Single Avalanche Current IAS [A] EAR = 10mJ EAS = 100mJ 1 0.1 1 10 100 Inductance L [mH] 2SK2671 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2671 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VDD = 400V 200V 300 100V VGS 15 10 200 5 100 ID = 5A TYP 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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